"Securing the Lead in the 8-inch SiC Foundry Market"...DB HiTek Accelerates Mass Production System

Product Development Time Reduced by One Year with Process Design Kits (PDKs)

Foundry Services to Expand Globally in the Second Quarter Next Year

On September 9, DB HiTek announced that it has completed reliability verification for its 8-inch wafer-based “1200V silicon carbide MOSFET (SiC MOSFET)” process and will formally launch its next-generation power semiconductor foundry business, targeting mass production next year.

Silicon carbide (SiC) is a next-generation power semiconductor material that demonstrates superior performance in high-temperature and high-voltage environments compared to conventional silicon (Si). As a result, it is widely used in electric vehicles, renewable energy, and industrial power equipment. The 1200V silicon carbide MOSFET is a power semiconductor switching device fabricated with this material, capable of withstanding and controlling voltages up to 1200V.

Although the current market is dominated by 6-inch wafers, leading global companies are rapidly shifting to 8-inch wafers to enhance production efficiency and cost competitiveness. DB HiTek has proactively responded to this market transition by developing 8-inch SiC process technology and establishing a foundry service infrastructure.

DB HiTek has established a foundry (semiconductor contract manufacturing) system that provides integrated support from design and fabrication to characterization and reliability verification. To help reduce clients’ initial development burden, the company supplies its own first and second-generation 1200V SiC process design kits (PDKs). A third-generation PDK is scheduled for release in November. By using these PDKs, customers can accelerate prototype production and reduce product development lead times by more than one year.

In terms of performance, the second-generation process achieved electrical characteristics of specific on-resistance (Rsp) of 2.5 mΩ·cm² or less and threshold voltage (Vth) of at least 3V under gate voltage (Vgs(on)) conditions of 18V, successfully passing reliability validation. DB HiTek completed process preparation for collaborative clients in the third quarter of this year and plans to expand its foundry services to all customers starting from the second quarter of next year.

A representative from DB HiTek stated, “The completion of reliability verification for the 1200V SiC MOSFET process signifies that we have, for the first time in the world, secured the core process technology and mass production capabilities necessary for 8-inch SiC foundry services. We will ensure smooth preparation for 8-inch SiC mass production next year, seize the market, and continue to strengthen our competitiveness in the next-generation power semiconductor foundry field.”

This content was produced with the assistance of AI translation services.