Samsung Electronics Ships World’s First HBM4E 12-Layer Sample, Solidifies Memory Technology Leadership (Update)

Equipped with 1c DRAM and 4nm Logic Die
Supports Speeds up to 16Gbps
Energy Efficiency Improved by 16%

Samsung Electronics has solidified its technological lead in the memory market by shipping the world’s first 7th-generation high-bandwidth memory (HBM4E) 12-stack samples.

On May 29, Samsung Electronics announced that it had supplied the next-generation 'HBM4E 12-stack' sample—expected to become a core component for AI accelerators—to global customers for the first time in the world.

The HBM4E 12-Stack product, the world's first shipped by Samsung Electronics. Samsung Electronics

After setting a milestone in February by successfully mass producing and shipping the industry’s fastest HBM4 (6th generation), Samsung Electronics has reaffirmed its memory technology leadership by commencing supply of the next-generation HBM4E just a few months later.

Samsung Electronics’ HBM4E achieves unrivaled specifications through design and process optimization. It supports per-pin data rates from 14Gbps up to a maximum of 16Gbps—an improvement of more than 20% compared to the previous HBM4. Additionally, with a single stack providing a bandwidth of 3.6TB per second, it maximizes computational speeds for large language models (LLMs) and next-generation AI systems.

The product also features enhanced capacity. The HBM4E 12-stack product delivers a high-capacity 48GB, increasing capacity by more than 30% compared to the previous generation. Samsung Electronics plans to further expand the lineup to 32GB (8-stack) and 64GB (16-stack) models to comprehensively meet diverse customer service environments.

HBM4E adopts the proven 1c (10nm-class, 6th generation) DRAM process and Samsung’s own foundry-based 4nm logic die (1nm = one-billionth of a meter). This not only maximizes the stability of the ultra-fine process but also ensures high yield and mass production capability. In addition, the integration of low-power design and optimized packaging structure technologies has led to significant improvements, with energy efficiency enhanced by 16% and thermal resistance by more than 14% compared to the previous generation.

Sangjoon Hwang, Executive Vice President and Head of DRAM Development at Samsung Electronics’ Memory Business, stated, “By successfully delivering both mass production of HBM4 and seamless supply of the next-generation HBM4E samples, Samsung Electronics has firmly established its unrivaled technology leadership in the market. We will continue to drive the growth of the global AI memory market with overwhelming technological superiority and proactive investment in production infrastructure.”

Starting with this sample supply, Samsung Electronics will begin mass production in line with customer schedules. The HBM4, which was the world’s first to be mass produced and shipped in February, is also being supplied in increasing volumes. In December 2025, Samsung Electronics’ HBM4 achieved the highest grade in the industry by demonstrating a leading speed of 11.7Gbps during the final SiP (System in Package) test phase.

This content was produced with the assistance of AI translation services.