Intel to Establish Semiconductor Manufacturing Facility in New Mexico for Advanced 3D Packaging Implementation
Introducing the First Manufacturing Facility Capable of Mass Production Using the Poveros Method
Intel has unveiled the first semiconductor manufacturing facility in the United States capable of mass-producing products using three-dimensional (3D) packaging technology in New Mexico.
Intel's semiconductor manufacturing facility 'Fab 9' unveiled in New Mexico, USA /
[Photo by Intel]
On the 25th, Intel announced the opening of its state-of-the-art semiconductor production facility, Fab 9, in Rio Rancho, New Mexico. Previously, the company had announced a $3.5 billion investment plan to introduce advanced semiconductor packaging manufacturing equipment, including the 3D packaging technology "Foveros," at its New Mexico production site.
Foveros is a packaging technology that flexibly combines different chips to optimize power, performance, and cost. It belongs to the advanced 3D method of building processors by stacking computing tiles vertically. Fab 9 is Intel's first manufacturing facility capable of mass production using the Foveros method. It is also Intel's first large-scale advanced packaging site where everything from order to final productization can be completed in one location.
With the operation of Fab 9, Intel plans to accelerate innovation in the field of advanced packaging technology. As the era of using multiple "chiplets" in a single package to enhance semiconductor performance has arrived, Intel intends to continue Moore's Law by increasing the utilization of advanced packaging technologies such as Foveros.
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Intel Global Chief Operating Officer (COO) and Senior Vice President Kaivan Espahani said, "We are introducing the only manufacturing facility in the United States capable of mass-producing the world's most advanced packaging solutions," adding, "With cutting-edge technology, we will provide tangible benefits to customers through a resilient end-to-end supply chain."
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